n-type Si/SiGe resonant tunnelling diodes

Paul, D.J. , See, P., Zozoulenko, I.V., Berggren, K.F., Hollander, B., Mantl, S., Griffin, N., Coonan, B.P., Redmond, G. and Crean, G.M. (2002) n-type Si/SiGe resonant tunnelling diodes. Materials Science and Engineering B: Solid-State Materials for Advanced Technology, 89(1-3), pp. 26-29. (doi:10.1016/S0921-5107(01)00785-1)

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Abstract

Resonant tunnelling diodes (RTDs) have been fabricated using Si/SiGe heterolayers which demonstrate room temperature performance comparable to III–V technology. Peak current densities up to 282 kA cm−2 with peak-to-valley current ratios (PVCRs) of 2.4 have been demonstrated at room temperature in devices with dimensions of 5×5 μm2. Scaling the device size demonstrates that the peak current density is inversely proportional to the device area. It is suggested that this is related to thermal limitations in the device structure. Estimates are also produced for the maximum frequency of oscillations of the diodes which suggest that oscillators may operate with speeds comparable to III–V diodes.

Item Type:Articles
Additional Information:Spring Meeting of the European-Materials-Research-Society, Strasbourg, France, 5-8 June, 2001. This work was funded under Esprit IV MEL-ARI (project number 22987).
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Paul, Professor Douglas
Authors: Paul, D.J., See, P., Zozoulenko, I.V., Berggren, K.F., Hollander, B., Mantl, S., Griffin, N., Coonan, B.P., Redmond, G., and Crean, G.M.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Research Group:Semiconductor Devices
Journal Name:Materials Science and Engineering B: Solid-State Materials for Advanced Technology
Publisher:Elsevier
ISSN:0921-5107
ISSN (Online):1873-4944

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