Si-based electroluminescence at THz frequencies

Lynch, S.A. et al. (2002) Si-based electroluminescence at THz frequencies. Materials Science and Engineering B: Solid-State Materials for Advanced Technology, 89(1-3), pp. 10-12. (doi: 10.1016/S0921-5107(01)00782-6)

Abstract

Experimental results of electroluminescence in the terahertz gap, at 6 THz (or 40 μm) from Si/SiGe multi quantum well structures, grown by a commercial chemical vapour deposition system are presented. Theoretical simulations were used to design the heterolayer structure and to explain the emission and absorption features. Electrical and materials characterisation is also presented to demonstrate the quality of the heterolayers.

• Item Type: Articles
• Additional Information: Spring Meeting of the European-Materials-Research-Society, Strasbourg, France, 5-8 June 2001. This project is funded by DARPA under USAF contract no. F-19628-C-99-0074.
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Paul, Professor Douglas
• Authors: Lynch, S.A., Dhillon, S.S., Bates, R., Paul, D.J., Arnone, D.D., Robbins, D.J., Ikonic, Z., Kelsall, R.W., Harrison, P., Norris, D.J., Cullis, A.G., Pidgeon, C.R., Murzyn, P., and Loudon, A.
• College/School: College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
• Journal Name: Materials Science and Engineering B: Solid-State Materials for Advanced Technology
• Publisher: Elsevier
• ISSN: 0921-5107
• ISSN (Online): 1873-4944