Si-based electroluminescence at THz frequencies

Lynch, S.A. et al. (2002) Si-based electroluminescence at THz frequencies. Materials Science and Engineering B: Solid-State Materials for Advanced Technology, 89(1-3), pp. 10-12. (doi:10.1016/S0921-5107(01)00782-6)

Full text not currently available from Enlighten.

Abstract

Experimental results of electroluminescence in the terahertz gap, at 6 THz (or 40 μm) from Si/SiGe multi quantum well structures, grown by a commercial chemical vapour deposition system are presented. Theoretical simulations were used to design the heterolayer structure and to explain the emission and absorption features. Electrical and materials characterisation is also presented to demonstrate the quality of the heterolayers.

Item Type:Articles
Additional Information:Spring Meeting of the European-Materials-Research-Society, Strasbourg, France, 5-8 June 2001. This project is funded by DARPA under USAF contract no. F-19628-C-99-0074.
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Paul, Professor Douglas
Authors: Lynch, S.A., Dhillon, S.S., Bates, R., Paul, D.J., Arnone, D.D., Robbins, D.J., Ikonic, Z., Kelsall, R.W., Harrison, P., Norris, D.J., Cullis, A.G., Pidgeon, C.R., Murzyn, P., and Loudon, A.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Materials Science and Engineering B: Solid-State Materials for Advanced Technology
Publisher:Elsevier
ISSN:0921-5107
ISSN (Online):1873-4944

University Staff: Request a correction | Enlighten Editors: Update this record