Picosecond intersubband dynamics in p-Si/SiGe quantum-well emitter structures

Murzyn, P. et al. (2002) Picosecond intersubband dynamics in p-Si/SiGe quantum-well emitter structures. Applied Physics Letters, 80(8), pp. 1456-1458. (doi:10.1063/1.1452794)

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We report time-resolved (ps) studies of the dynamics of intersubband transitions in p-Si/SiGe multiquantum-well structures in the far-infrared (FIR) regime, ℏω<ℏωLO, utilizing the Dutch free electron laser, (entitled FELIX—free electron laser for infrared radiation). The calculated scattering rates for optic and acoustic phonon, and alloy scattering have been included in a rate equation model of the transient FIR intersubband absorption, and show excellent agreement with our degenerate pump-probe spectroscopy measurements where, after an initial rise time determined by the resolution of our measurement, we determine a decay time of ∼10 ps. This is found to be approximately constant in the temperature range from 4 to 100 K, in good agreement with the predictions of alloy scattering in the Si0.7Ge0.3 wells.

Item Type:Articles
Additional Information:This Si/SiGe program is funded by DARPA on the USAF Contract No. F-19628-99-C-0074.
Glasgow Author(s) Enlighten ID:Paul, Professor Douglas
Authors: Murzyn, P., Pidgeon, C.R., Wells, J.P.R., Bradley, I.V., Ikonic, Z., Kelsall, R.W., Harrison, P., Lynch, S.A., Paul, D.J., Arnone, D.D., Robbins, D.J., Norris, D., and Cullis, A.G.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Research Group:Semiconductor Devices
Journal Name:Applied Physics Letters
Publisher:AIP Publishing
ISSN (Online):1077-3118
Published Online:22 February 2002

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