Intersubband electroluminescence from Si/SiGe cascade emitters at terahertz frequencies

Lynch, S.A., Bates, R., Paul, D.J. , Norris, D.J., Cullis, A.G., Ikonic, Z., Kelsall, R.W., Harrison, P., Arnone, D.D. and Pidgeon, C.R. (2002) Intersubband electroluminescence from Si/SiGe cascade emitters at terahertz frequencies. Applied Physics Letters, 81(9), pp. 1543-1545. (doi:10.1063/1.1501759)

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Abstract

The quantum cascade laser provides one possible method of realizing high efficiency light emitters in indirect band gap materials such as silicon. Electroluminescence results from Si/SiGe quantum cascade emitters are presented demonstrating edge emission from heavy-hole to heavy-hole transitions and light-hole to heavy-hole transitions. In surface-normal emission, only light-hole to heavy-hole electroluminescence is observed as predicted by theory. Intersubband emission is demonstrated at 2.9 THz (103 μm wavelength), 8.9 THz (33.7 μm), and 16.2 THz (18.5 μm) from the Si/SiGe quantum cascade heterostructures.

Item Type:Articles
Additional Information:This work was funded by U. S. DARPA under Air Force Contract No. F-19628-99-C-0074.
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Paul, Professor Douglas
Authors: Lynch, S.A., Bates, R., Paul, D.J., Norris, D.J., Cullis, A.G., Ikonic, Z., Kelsall, R.W., Harrison, P., Arnone, D.D., and Pidgeon, C.R.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Research Group:Semiconductor Devices
Journal Name:Applied Physics Letters
Publisher:AIP Publishing
ISSN:0003-6951
ISSN (Online):1077-3118
Published Online:19 August 2002

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