THz intersubband dynamics in p-Si/SiGe quantum well structures

Pidgeon, C.R. et al. (2002) THz intersubband dynamics in p-Si/SiGe quantum well structures. Physica E: Low-Dimensional Systems and Nanostructures, 13(2-4), pp. 904-907. (doi:10.1016/S1386-9477(02)00231-X)

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We report time-resolved (ps) studies of the dynamics of intersubband transitions in p-Si/SiGe multi-quantum well structures in the FIR regime, ℏω<ℏωLO, utilizing the Dutch free electron laser, FELIX. The calculated scattering rates have been included in a rate equation model of the transient FIR intersubband absorption, and show excellent agreement with our degenerate pump–probe spectroscopy measurements where after an initial rise time determined by the resolution of our measurement we determine a decay time of . This is found to be approximately constant in the temperature range from 4 to 100 K , in good agreement with the predictions of alloy scattering in the Si0.7Ge0.3 wells.

Item Type:Articles
Additional Information:10th International Conference on Modulated Semiconductor Structures, Linz, Austria, 23-27 July, 2001. This Si=SiGe programme is funded by DARPA on the USAF contract F-19628-99-C-0074.
Glasgow Author(s) Enlighten ID:Paul, Professor Douglas
Authors: Pidgeon, C.R., Murzyn, P., Wells, J.P.R., Bradley, I.V., Ikonic, Z., Kelsall, R.W., Harrison, P., Lynch, S.A., Paul, D.J., Arnone, D.D., Robbins, D.J., Norris, D., and Cullis, A.G.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Research Group:Semiconductor Devices
Journal Name:Physica E: Low-Dimensional Systems and Nanostructures
Publisher:Elsevier BV
ISSN (Online):1873-1759
Published Online:25 January 2002

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