Si/SiGe quantum-cascade emitters for terahertz applications

Paul, D.J. et al. (2003) Si/SiGe quantum-cascade emitters for terahertz applications. Physica E: Low-Dimensional Systems and Nanostructures, 16(1), pp. 147-155. (doi:10.1016/S1386-9477(02)00590-8)

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The quantum cascade laser provides one possible method of realizing high e=ciency light emission from indirect band gap materials such as silicon. Strain-symmetrized Si/SiGe samples designed to investigate the intersubband properties of quantum wells are examined. Electroluminescence data from Si/SiGe quantum-cascade staircases demonstrating edge emission from heavy-hole to heavy-hole transitions and light-hole to heavy-hole transitions are presented. In surface-normal emission only light-hole to heavy-hole electroluminescence is observed at 2:9 THz (103 �m wavelength) as predicted by theory. Modulation-doped SiGe quantum well samples are also investigated to determine the underlying physics in the system. Results of picosecond time resolved studies of the dynamics of the intersubband transitions using a free electron laser are presented which show approximately constant relaxation times of 10 ps below 100 K.

Item Type:Articles
Additional Information:12th International Winterschool on New Developments in Solid State Physics, Mautendorf, Austria, 25 February – 1 March 2002. This work was funded by US DARPA under Air Force contract F-19628-99-C-0074
Glasgow Author(s) Enlighten ID:Paul, Professor Douglas
Authors: Paul, D.J., Lynch, S.A., Bates, R., Ikonic, Z., Kelsall, R.W., Harrison, P., Norris, D.J., Liew, S.L., Cullis, A.G., Arnone, D.D., Pidgeon, C.R., Murzyn, P., Wells, J.P.R., and Bradley, I.V.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Research Group:Semiconductor Devices
Journal Name:Physica E: Low-Dimensional Systems and Nanostructures
Publisher:Elsevier BV
ISSN (Online):1873-1759
Published Online:05 October 2002

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