Electroluminescence from Si/SiGe quantum cascade emitters

Paul, D.J. et al. (2003) Electroluminescence from Si/SiGe quantum cascade emitters. Physica E: Low-Dimensional Systems and Nanostructures, 16(3-4), pp. 309-314. (doi:10.1016/S1386-9477(02)00689-6)

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Intersubband electroluminescence results are presented from Si/SiGe quantum cascade emitters at 3.2 THz and at temperatures up to 150 K. The effect of adding doping into the active quantum wells was studied in addition to reduced barrier widths from previous measurements. While the current through the sample is increased by the addition of doping, the emitted power is reduced through additional free carrier absorption and Coulombic scattering. Free electron laser measurements confirm the intersubband transitions in the quantum wells of the cascade devices and produce non-radiative lifetimes of similar to 20 ps between 4 and 150 K.

Item Type:Articles
Additional Information:The work was funded by DARPA under a US Air Force contract F-19628-99-C-0074.
Glasgow Author(s) Enlighten ID:Paul, Professor Douglas
Authors: Paul, D.J., Lynch, S.A., Bates, R., Ikonic, Z., Kelsall, R.W., Harrison, P., Norris, D.J., Liew, S.L., Cullis, A.G., Murzyn, P., Pidgeon, C., Arnone, D.D., and Robbins, D.J.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Research Group:Semiconductor Devices
Journal Name:Physica E: Low-Dimensional Systems and Nanostructures
Publisher:Elsevier BV
ISSN (Online):1873-1759
Published Online:13 December 2002

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