Growth and structural characterisation of Si/SiGe hetero structures for optoelectronic applications

Li, X.B., Neave, J.H., Norris, D.J., Cullis, A.G., Paul, D.J. , Kelsall, R.W. and Zhang, J. (2005) Growth and structural characterisation of Si/SiGe hetero structures for optoelectronic applications. Optical Materials, 27(5), pp. 855-858. (doi:10.1016/j.optmat.2004.08.024)

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Abstract

The availability of compliant substrates has opened new avenues to exploit SiGe materials for optoelectronic applications. In this paper, relevant issues including fabrication of compliant substrates through compositionally graded buffer layers, strain (stress) balance in active layer design and X-ray characterisation are discussed. Quantum cascade structures designed for light emitting devices at THz range are grown using a combination of low pressure chemical vapour deposition and gas source molecular beam epitaxy in a single growth system. The results of structural characterisation by X-ray diffraction and transmission electron microscopy show that by following stringent design criteria, active layer structures more than 4 μm thick with low threading dislocation density can be achieved. Electroluminance in the THz frequency range have been observed from these structures.

Item Type:Articles
Additional Information:The work reported here is partially supported by EPSRC through Grant No. GR/N65714.
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Paul, Professor Douglas
Authors: Li, X.B., Neave, J.H., Norris, D.J., Cullis, A.G., Paul, D.J., Kelsall, R.W., and Zhang, J.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Research Group:Semiconductor Devices
Journal Name:Optical Materials
Publisher:Elsevier
ISSN:0925-3467
Published Online:12 October 2004

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