SiGe quantum cascade structures for light emitting devices

Zhang, J., Li, X.B., Neave, J.H., Norris, D.J., Cullis, A.G., Kelsall, R.W., Lynch, S., Towsend, P., Paul, D.J. and Fewster, P.F. (2005) SiGe quantum cascade structures for light emitting devices. Journal of Crystal Growth, 278(1-4), pp. 488-494. (doi:10.1016/j.jcrysgro.2004.12.046)

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Abstract

The realisation of III–V quantum cascade lasers has initiated a strong interest in developing a Si/SiGe-based quantum cascade laser over the last 3 years. Most efforts were focused on the growth of strain-balanced Si/SiGe superlattices on strain-relaxed SiGe virtual substrates. This paper discusses the progress so far and addresses some of the material issues related to the epitaxy of Si/SiGe quantum cascade structures, including strain–stress balance and production of strain-relaxed SiGe virtual substrates.

Item Type:Articles (Letter)
Additional Information:13th International Conference on Molecular Beam Epitaxy (MBE XII), Edinburgh, Scotland, 22-27 August 2004
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Paul, Professor Douglas
Authors: Zhang, J., Li, X.B., Neave, J.H., Norris, D.J., Cullis, A.G., Kelsall, R.W., Lynch, S., Towsend, P., Paul, D.J., and Fewster, P.F.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Research Group:Semiconductor Devices
Journal Name:Journal of Crystal Growth
Publisher:Elsevier
ISSN:0022-0248
ISSN (Online):0022-0248
Published Online:23 February 2005

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