Zhang, J., Li, X.B., Neave, J.H., Norris, D.J., Cullis, A.G., Kelsall, R.W., Lynch, S., Towsend, P., Paul, D.J. and Fewster, P.F. (2005) SiGe quantum cascade structures for light emitting devices. Journal of Crystal Growth, 278(1-4), pp. 488-494. (doi: 10.1016/j.jcrysgro.2004.12.046)
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Abstract
The realisation of III–V quantum cascade lasers has initiated a strong interest in developing a Si/SiGe-based quantum cascade laser over the last 3 years. Most efforts were focused on the growth of strain-balanced Si/SiGe superlattices on strain-relaxed SiGe virtual substrates. This paper discusses the progress so far and addresses some of the material issues related to the epitaxy of Si/SiGe quantum cascade structures, including strain–stress balance and production of strain-relaxed SiGe virtual substrates.
Item Type: | Articles (Letter) |
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Additional Information: | 13th International Conference on Molecular Beam Epitaxy (MBE XII), Edinburgh, Scotland, 22-27 August 2004 |
Status: | Published |
Refereed: | Yes |
Glasgow Author(s) Enlighten ID: | Paul, Professor Douglas |
Authors: | Zhang, J., Li, X.B., Neave, J.H., Norris, D.J., Cullis, A.G., Kelsall, R.W., Lynch, S., Towsend, P., Paul, D.J., and Fewster, P.F. |
College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
Research Group: | Semiconductor Devices |
Journal Name: | Journal of Crystal Growth |
Publisher: | Elsevier |
ISSN: | 0022-0248 |
ISSN (Online): | 0022-0248 |
Published Online: | 23 February 2005 |
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