Investigation of the injection velocity of holes in strained Si pMOSFETs

Nicholas, G., Grasby, T.J., Parker, E.H.C., Whall, T.E., Paul, D.J. , Evans, G.R. and von Kanel, H. (2005) Investigation of the injection velocity of holes in strained Si pMOSFETs. Semiconductor Science and Technology, 20(5), L20-L22. (doi:10.1088/0268-1242/20/5/l02)

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Abstract

Using a pulsed measurement system, the drain current in a high mobility strained Si pMOSFET was extracted in the absence of self-heating. This was used to demonstrate that the injection velocity of holes from the source is well below the thermal limit for biaxial tensile strained Si pMOSFETs down to 0.1 µm channel length.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Paul, Professor Douglas
Authors: Nicholas, G., Grasby, T.J., Parker, E.H.C., Whall, T.E., Paul, D.J., Evans, G.R., and von Kanel, H.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Research Group:Semiconductor Devices
Journal Name:Semiconductor Science and Technology
Publisher:IOP Publishing
ISSN:0268-1242
ISSN (Online):1361-6641

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