Investigation of the injection velocity of holes in strained Si pMOSFETs

Nicholas, G., Grasby, T.J., Parker, E.H.C., Whall, T.E., Paul, D.J. , Evans, G.R. and von Kanel, H. (2005) Investigation of the injection velocity of holes in strained Si pMOSFETs. Semiconductor Science and Technology, 20(5), L20-L22. (doi: 10.1088/0268-1242/20/5/l02)

Abstract

Using a pulsed measurement system, the drain current in a high mobility strained Si pMOSFET was extracted in the absence of self-heating. This was used to demonstrate that the injection velocity of holes from the source is well below the thermal limit for biaxial tensile strained Si pMOSFETs down to 0.1 µm channel length.

• Item Type: Articles
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Paul, Professor Douglas
• Authors: Nicholas, G., Grasby, T.J., Parker, E.H.C., Whall, T.E., Paul, D.J., Evans, G.R., and von Kanel, H.
• College/School: College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
• Research Group: Semiconductor Devices
• Journal Name: Semiconductor Science and Technology
• Publisher: IOP Publishing
• ISSN: 0268-1242
• ISSN (Online): 1361-6641