Terahertz emission and absorption characteristics of silicon containing boron and phosphorous impurity dopants and the effect of temperature

Matmon, G., Lynch, S.A., Townsend, P., Paul, D.J. , Bain, M., Gamble, H.S., Zhang, J., Ikonic, Z., Kelsall, R.W. and Harrison, P. (2005) Terahertz emission and absorption characteristics of silicon containing boron and phosphorous impurity dopants and the effect of temperature. In: 2nd IEEE International Conference on Group IV Photonics, Antwerp, Belgium, 21-23 Sept 2005, pp. 13-15. ISBN 0780390709 (doi:10.1109/GROUP4.2005.1516386)

Full text not currently available from Enlighten.

Abstract

The emission and absorption characteristics of boron-doped and phosphorous-doped silicon at terahertz frequencies are investigated. Different doping concentrations are considered and individual terahertz optical transitions are identified. The effect of temperature is considered.

Item Type:Conference Proceedings
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Paul, Professor Douglas
Authors: Matmon, G., Lynch, S.A., Townsend, P., Paul, D.J., Bain, M., Gamble, H.S., Zhang, J., Ikonic, Z., Kelsall, R.W., and Harrison, P.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Research Group:Semiconductor Devices
ISBN:0780390709

University Staff: Request a correction | Enlighten Editors: Update this record