Matmon, G., Lynch, S.A., Townsend, P., Paul, D.J. , Bain, M., Gamble, H.S., Zhang, J., Ikonic, Z., Kelsall, R.W. and Harrison, P. (2005) Terahertz emission and absorption characteristics of silicon containing boron and phosphorous impurity dopants and the effect of temperature. In: 2nd IEEE International Conference on Group IV Photonics, Antwerp, Belgium, 21-23 Sept 2005, pp. 13-15. ISBN 0780390709 (doi: 10.1109/GROUP4.2005.1516386)
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Abstract
The emission and absorption characteristics of boron-doped and phosphorous-doped silicon at terahertz frequencies are investigated. Different doping concentrations are considered and individual terahertz optical transitions are identified. The effect of temperature is considered.
Item Type: | Conference Proceedings |
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Status: | Published |
Refereed: | Yes |
Glasgow Author(s) Enlighten ID: | Paul, Professor Douglas |
Authors: | Matmon, G., Lynch, S.A., Townsend, P., Paul, D.J., Bain, M., Gamble, H.S., Zhang, J., Ikonic, Z., Kelsall, R.W., and Harrison, P. |
College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
Research Group: | Semiconductor Devices |
ISBN: | 0780390709 |
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