Magnetoconductivity of Hubbard bands induced in silicon MOSFETs

Ferrus, T., George, R., Barnes, C.H.W., Lumpkin, N., Paul, D.J. and Pepper, M. (2007) Magnetoconductivity of Hubbard bands induced in silicon MOSFETs. Physica B: Condensed Matter, 400(1-2), pp. 218-223. (doi:10.1016/j.physb.2007.07.011)

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Abstract

Sodium impurities are diffused electrically to the oxide-semiconductor interface of a silicon MOSFET to create an impurity band. At low temperature and at low electron density, the band is split into an upper and a lower sections under the influence of Coulomb interactions. We used magnetoconductivity measurements to provide evidence for the existence of Hubbard bands and determine the nature of the states in each band.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Paul, Professor Douglas
Authors: Ferrus, T., George, R., Barnes, C.H.W., Lumpkin, N., Paul, D.J., and Pepper, M.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Research Group:Semiconductor Devices
Journal Name:Physica B: Condensed Matter
Publisher:Elsevier
ISSN:0921-4526
ISSN (Online):1873-2135

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