Molecular beam epitaxy growth of Si/SiGe bound-to-continuum quantum cascade structures for THz emission

Zhao, M., Karim, A., Hansson, G.V., Ni, W.-X., Townsend, P., Lynch, S.A. and Paul, D.J. (2008) Molecular beam epitaxy growth of Si/SiGe bound-to-continuum quantum cascade structures for THz emission. Thin Solid Films, 517(1), pp. 34-37. (doi:10.1016/j.tsf.2008.08.091)

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Abstract

A Si/SiGe bound-to-continuum quantum cascade design for THz emission was grown using solid-source molecular beam epitaxy on Si0.8Ge0.2 virtual substrates. The growth parameters were carefully studied and several samples with different boron doping concentrations were grown at optimized conditions. Extensive material characterizations revealed a high crystalline quality of the grown structures with an excellent growth control. Layer undulations resulting from a nonuniform strain field, introduced by high doping concentration, were observed. The device characterizations suggested that a modification on the design was needed in order to enhance the THz emission.

Item Type:Articles (Letter)
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Paul, Professor Douglas
Authors: Zhao, M., Karim, A., Hansson, G.V., Ni, W.-X., Townsend, P., Lynch, S.A., and Paul, D.J.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Research Group:Semiconductor Devices
Journal Name:Thin Solid Films
Publisher:Elsevier
ISSN:0040-6090
ISSN (Online):0040-6090

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