An ultra-low-power MMIC amplifier using 50nm delta In0.52Al0.48As/In0.53Ga0.47As metamorphic HEMT

Hwang, C.-J., Lok, L.B., Chong, H.M.H., Holland, M., Thayne, I.G. and Elgaid, K. (2010) An ultra-low-power MMIC amplifier using 50nm delta In0.52Al0.48As/In0.53Ga0.47As metamorphic HEMT. IEEE Electron Device Letters, 31(11), pp. 1230-1232. (doi:10.1109/LED.2010.2070484)

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Publisher's URL: http://dx.doi.org/10.1109/LED.2010.2070484

Abstract

An ultra-low-power monolithic amplifier using 50-nm gate-length GaAs metamorphic high-electron-mobility transistor (MHEMT) has been designed and fabricated by a coplanar waveguide monolithic microwave integrated circuit process. A double (5-doped In0.52Al0.48As/In0.53Ga0.47As MHEMT technology with optimal doping profiles was used to achieve both ultra-low dc power consumption and good dynamic-range performance. The single-stage amplifier operates in the 24-GHz band and shows typical gain of 7.2 dB, ±0.5 dB bandwidth of 1.2 GHz, return losses better than 9 dB, and input IP3 (IIP3) of +3 dBm while consuming only 0.9 mW of dc power. These experimental results demonstrate the outstanding potential of MHEMT technology for ultra-low-power applications such as wireless sensor networks

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Lok, Dr Lai Bun and Thayne, Professor Iain and Chong, Dr Harold and Elgaid, Dr Khaled and Holland, Dr Martin
Authors: Hwang, C.-J., Lok, L.B., Chong, H.M.H., Holland, M., Thayne, I.G., and Elgaid, K.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:IEEE Electron Device Letters
Publisher:Institute of Electrical and Electronics Engineers
ISSN:0741-3106
ISSN (Online):1558-0563

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