Hwang, C.-J., Lok, L.B., Chong, H.M.H., Holland, M., Thayne, I.G. and Elgaid, K. (2010) An ultra-low-power MMIC amplifier using 50nm delta In0.52Al0.48As/In0.53Ga0.47As metamorphic HEMT. IEEE Electron Device Letters, 31(11), pp. 1230-1232. (doi: 10.1109/LED.2010.2070484)
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Publisher's URL: http://dx.doi.org/10.1109/LED.2010.2070484
Abstract
An ultra-low-power monolithic amplifier using 50-nm gate-length GaAs metamorphic high-electron-mobility transistor (MHEMT) has been designed and fabricated by a coplanar waveguide monolithic microwave integrated circuit process. A double (5-doped In0.52Al0.48As/In0.53Ga0.47As MHEMT technology with optimal doping profiles was used to achieve both ultra-low dc power consumption and good dynamic-range performance. The single-stage amplifier operates in the 24-GHz band and shows typical gain of 7.2 dB, ±0.5 dB bandwidth of 1.2 GHz, return losses better than 9 dB, and input IP3 (IIP3) of +3 dBm while consuming only 0.9 mW of dc power. These experimental results demonstrate the outstanding potential of MHEMT technology for ultra-low-power applications such as wireless sensor networks
Item Type: | Articles |
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Status: | Published |
Refereed: | Yes |
Glasgow Author(s) Enlighten ID: | Thayne, Prof Iain and Chong, Dr Harold and Elgaid, Dr Khaled and Lok, Dr Lai Bun and Holland, Dr Martin |
Authors: | Hwang, C.-J., Lok, L.B., Chong, H.M.H., Holland, M., Thayne, I.G., and Elgaid, K. |
College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
Journal Name: | IEEE Electron Device Letters |
Publisher: | Institute of Electrical and Electronics Engineers |
ISSN: | 0741-3106 |
ISSN (Online): | 1558-0563 |
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