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Improved gain block for long wavelength (1.55 µm) hybrid integrated devices

Lealman, I.F., Kelly, A., Rivers, L.J., Perrin, S.D., and Moore, R. (1998) Improved gain block for long wavelength (1.55 µm) hybrid integrated devices. Electronics Letters, 34 (23). pp. 2247-2249. ISSN 0013-5194 (doi:10.1049/el:19981557)

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Publisher's URL: http://dx.doi.org/10.1049/el:19981557

Abstract

A curved waveguide, strained multiple quantum well reflective amplifier with an integrated front facet mode expander has been designed and fabricated. A device without facet coatings has been found to have a chip gain of 36 dB with 6 dB of gain ripple. This equates to an effective facet reflectivity of 8×10-6

Item Type:Article
Status:Published
Refereed:Yes
Glasgow Author(s):Kelly, Dr Anthony
Authors: Lealman, I.F., Kelly, A., Rivers, L.J., Perrin, S.D., and Moore, R.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Electronics Letters
Publisher:The Institution of Engineering & Technology
ISSN:0013-5194
ISSN (Online):1350-911X

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