Improved gain block for long wavelength (1.55 µm) hybrid integrated devices

Lealman, I.F., Kelly, A. , Rivers, L.J., Perrin, S.D. and Moore, R. (1998) Improved gain block for long wavelength (1.55 µm) hybrid integrated devices. Electronics Letters, 34(23), pp. 2247-2249. (doi: 10.1049/el:19981557)

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A curved waveguide, strained multiple quantum well reflective amplifier with an integrated front facet mode expander has been designed and fabricated. A device without facet coatings has been found to have a chip gain of 36 dB with 6 dB of gain ripple. This equates to an effective facet reflectivity of 8×10<sup>-6</sup>

Item Type:Articles
Glasgow Author(s) Enlighten ID:Kelly, Professor Anthony
Authors: Lealman, I.F., Kelly, A., Rivers, L.J., Perrin, S.D., and Moore, R.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Electronics Letters
Publisher:The Institution of Engineering & Technology
ISSN (Online):1350-911X

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