Clemens, J.B., Chagarov, E.A., Holland, M., Droopad, R., Shen, J. and Kummel, A.C. (2010) Atomic imaging of the monolayer nucleation and unpinning of a compound semiconductor surface during atomic layer deposition. Journal of Chemical Physics, 133(15), p. 154704. (doi: 10.1063/1.3487737)
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Publisher's URL: http://dx.doi.org/10.1063/1.3487737
Abstract
The reaction of trimethyl aluminum on the group III rich reconstructions of InAs(0 0 1) and In0.53Ga0.47As(0 0 1) is observed with scanning tunneling microscopy/spectroscopy. At high coverage, a self-terminated ordered overlayer is observed that provides the monolayer nucleation density required for subnanometer thick transistor gate oxide scaling and removes the surface Fermi level pinning that is present on the clean InGaAs surface. Density functional theory simulations confirm that an adsorbate-induced reconstruction is the basis of the monolayer nucleation density and passivation
Item Type: | Articles |
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Status: | Published |
Refereed: | Yes |
Glasgow Author(s) Enlighten ID: | Holland, Dr Martin |
Authors: | Clemens, J.B., Chagarov, E.A., Holland, M., Droopad, R., Shen, J., and Kummel, A.C. |
College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
Journal Name: | Journal of Chemical Physics |
ISSN: | 0021-9606 |
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