Defect-enhanced silicon-on-insulator waveguide resonant photodetector with high sensitivity at 1.55μm

Logan, D.F., Velha, P., Sorel, M., De La Rue, R.M. , Knights, A.P. and Jessop, P.E. (2010) Defect-enhanced silicon-on-insulator waveguide resonant photodetector with high sensitivity at 1.55μm. IEEE Photonics Technology Letters, 22(20), pp. 1530-1532. (doi:10.1109/LPT.2010.2066963)

Logan, D.F., Velha, P., Sorel, M., De La Rue, R.M. , Knights, A.P. and Jessop, P.E. (2010) Defect-enhanced silicon-on-insulator waveguide resonant photodetector with high sensitivity at 1.55μm. IEEE Photonics Technology Letters, 22(20), pp. 1530-1532. (doi:10.1109/LPT.2010.2066963)

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Abstract

We describe the fabrication and characterization of a silicon waveguide resonant photodetector compatible with the optical-to-electrical conversion of wavelengths at, or around, 1550 nm. Sub-band responsivity is provided through the introduction of defects via inert self-implantation and subsequent annealing. The detector is located within a 20- m radius silicon microring resonator. An 18-dB resonant enhancement in absorption coefficient and 12-dB enhancement in photocurrent were measured, leading to a resonant responsivity of approximately 39 mA/W at 20-V reverse bias.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Sorel, Professor Marc and De La Rue, Professor Richard and Velha, Mr Philippe
Authors: Logan, D.F., Velha, P., Sorel, M., De La Rue, R.M., Knights, A.P., and Jessop, P.E.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:IEEE Photonics Technology Letters
Publisher:IEEE
ISSN:1041-1135
Published Online:12 August 2010

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