8-band k.p modeling of the quantum confined Stark effect in Ge quantum wells on Si substrates

Paul, D.J. (2008) 8-band k.p modeling of the quantum confined Stark effect in Ge quantum wells on Si substrates. Physical Review B, 77, p. 155323. (doi:10.1103/PhysRevB.77.155323)



Publisher's URL: http://dx.doi.org/10.1103/PhysRevB.77.155323


Recent work using compressively strained-Ge quantum wells grown on S1-yGey virtual substrates has demonstrated efficient modulation on a silicon substrate through the quantum confined Stark effect with performance comparable to many direct bandgap III-V materials. The absorption of compressively strained-Ge quantum wells is calculated using an 8-band k.p solver within the envelope function technique. The calculated absorption spectra provide excellent agreement with experimental results, demonstrating that the absorption is dominated by the direct bandgap and allow a number of predictions of the absorption for different polarizations, quantum well widths, electric fields and strain to be calculated. It is also shown that some of the experimental results in the literature require tensile strained substrates to produce agreement with the theoretical calculations.

Item Type:Articles
Keywords:Si; SiGe; Ge quantum confined Stark effect; modulator
Glasgow Author(s) Enlighten ID:Paul, Professor Douglas
Authors: Paul, D.J.
Subjects:T Technology > TK Electrical engineering. Electronics Nuclear engineering
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Research Group:Micro and Nanotechnology
Journal Name:Physical Review B
Publisher:American Physical Society
ISSN (Online):1550-235X
Copyright Holders:Copyright © 2008 American Physical Society
First Published:First published in Physical Review B 77:155323
Publisher Policy:Reproduced in accordance with the copyright policy of the publisher

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