A unified density gradient approach to 'ab-initio' ionized impurity scattering in 3D MC simulations of nano-CMOS variability

Alexander, C., Kovac, U., Roy, G., Roy, S. and Asenov, A. (2009) A unified density gradient approach to 'ab-initio' ionized impurity scattering in 3D MC simulations of nano-CMOS variability. In: Ultimate Integration of Silicon: ULIS 2009, Aachen, Germany, 18-20 Mar 2009, pp. 43-46. (doi:10.1109/ULIS.2009.4897535)

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Abstract

A methodology for incorporating quantum corrections into self-consistent atomistic Monte Carlo (MC) simulations via the density gradient effective potential is presented. The quantum corrections not only capture charge confinement effects, but accurately represent the electron-impurity interaction used in previous dasiaab initiopsila atomistic MC simulations, showing agreement with bulk mobility simulation. The effect of quantum corrected transport variation in statistical atomistic MC simulation is then investigated using a series of realistic scaled devices. Increased current variation is observed compared with quantum corrected drift diffusion simulation and with previous classical MC results.

Item Type:Conference Proceedings
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Roy, Dr Gareth and Asenov, Professor Asen and Alexander, Dr Craig and Kovac, Mr Urban and Roy, Professor Scott
Authors: Alexander, C., Kovac, U., Roy, G., Roy, S., and Asenov, A.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering

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