Understanding LER-induced statistical variability: a 35,000 sample 3D simulation study

Reid, D., Millar, C., Roy, G., Roy, S. and Asenov, A. (2009) Understanding LER-induced statistical variability: a 35,000 sample 3D simulation study. In: European Solid State Device Research Conference, 2009. ESSDERC '09, Athens, Greece, 14-18 Sep 2009, pp. 423-426. (doi:10.1109/ESSDERC.2009.5331515)

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Abstract

We study, in detail, statistical threshold voltage variability in a state of the art n-channel MOSFET introduced by line edge roughness. A large sample of 35,000 transistors with microscopically different LER patterns was simulated using the Glasgow 3D `atomistic' device simulator. Such large-scale simulation has been enabled by advanced grid computing technology. The results show that the statistical distribution of threshold voltage due to LER is asymmetric. Detailed analysis of the simulation results provide in depth understanding of the physical mechanisms governing LER induced statistical variability.

Item Type:Conference Proceedings
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Millar, Dr Campbell and Roy, Dr Gareth and Asenov, Professor Asen and Reid, Mr David and Roy, Professor Scott
Authors: Reid, D., Millar, C., Roy, G., Roy, S., and Asenov, A.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering

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