Si/SiGe bound-to-continuum quantum cascade emitters

Paul, D.J. , Matmon, G., Lever, L., Ikonic, Z., Kelsall, R., Chrastina, D., Isella, G., Von Kanel, H., Muller, E. and Neels, A. (2008) Si/SiGe bound-to-continuum quantum cascade emitters. In: 214 th ESC Meeting: SiGe, Ge and related Compounds 3: Materials, Processing and Devices, Honolulu, HI, 12-17 October 2008, pp. 865-874. ISBN 9781566776561 (doi:10.1149/1.2986846)



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Si/SiGe bound-to-continuum quantum cascade emitters designed by self-consistent 6-band k.p modeling and grown by low energy plasma enhanced chemical vapour deposition are presented demonstrating electroluminescence between 1.5 and 3 THz. The electroluminescence is Stark shifted by an electric field and demonstrates polarized emission consistent with the design. Transmission electron microscopy and x-ray diffraction are also presented to characterize the thick heterolayer structure.

Item Type:Conference Proceedings
Additional Information:Working title: Si/SiGe bound-to-continuum terahertz quantum cascade emitters
Keywords:Si, SiGe, technology, terahertz, quantum cascade lasers, sources, heterostructures
Glasgow Author(s) Enlighten ID:Paul, Professor Douglas
Authors: Paul, D.J., Matmon, G., Lever, L., Ikonic, Z., Kelsall, R., Chrastina, D., Isella, G., Von Kanel, H., Muller, E., and Neels, A.
Subjects:T Technology > TK Electrical engineering. Electronics Nuclear engineering
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Research Group:Micro and Nanotechnology
Publisher:Electrochemical Society
Copyright Holders:Copyright © 2008 Electrochemical Society, Inc.
First Published:First published in ECS Transactions 16(10):865-874
Publisher Policy:All rights reserved. Except as provided under U.S. copyright law, this work may not be reproduced, resold, distributed, or modified without the express permission of The Electrochemical Society (ECS).

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