eLeNA: a parametric CMOS Active-Pixel Sensor for the evaluation of reset noise reduction architectures

Anaxagoras, T., Kent, P., Allinson, N., Turchetta, R.,, Pickering, T., Maneuski, D., Blue, A. and O'Shea, V. (2010) eLeNA: a parametric CMOS Active-Pixel Sensor for the evaluation of reset noise reduction architectures. IEEE Transactions on Electron Devices, 57(9), pp. 2163-2175. (doi:10.1109/TED.2010.2052418)

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Abstract

We present a novel complementary metal-oxide-semiconductor (CMOS) active-pixel sensor imager that incorporates different reset schemes to achieve lower reset noise levels. The sensor, eLeNA, features a 448 × 512 array with a pixel pitch of 15 μm, fabricated using a 0.18- μm CMOS process. Fourteen sections and five different reset methods were employed. Without using pinned diodes, we implanted structures for correlated double sampling. A noise of 6 e- is measured with a conversion gain of 49 μV/e-. We will discuss various applications for the reset method that achieved the best overall performance, considering leakage current and read noise.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:O'Shea, Professor Val and Maneuski, Dr Dima and Blue, Dr Andrew
Authors: Anaxagoras, T., Kent, P., Allinson, N., Turchetta, R.,, Pickering, T., Maneuski, D., Blue, A., and O'Shea, V.
College/School:College of Science and Engineering > School of Physics and Astronomy
Journal Name:IEEE Transactions on Electron Devices
Publisher:Institute of Electrical and Electronics Engineers
ISSN:0018-9383
Published Online:01 September 2010

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