Investigation of resistance in n-doped Si wires using NEGF formalism

Martinez, A., Brown, A., Seoane, N. and Asenov, A. (2009) Investigation of resistance in n-doped Si wires using NEGF formalism. In: Spanish Conference on Electron Devices (CDE 2009), Santiago de Compostela, Spain, 11-13 Feb 2009, pp. 416-419. ISBN 9781424428380 (doi: 10.1109/SCED.2009.4800522)

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Abstract

In this work we use a full 3D Non-Equilibrium Green Function formalism in the effective mass approximation to calculate the resistance and resistivity of a thin silicon nanowire transistor and a doped silicon nanowire. The Non-Equilibrium green function equations are solved self-consistent with the Poisson equation. The resistances are calculated by averaging the resulting currents from an ensemble of wires and transistors. The number and spatial location of the discrete dopants differ for each device in the ensemble. The calculated resistivities agree with the bulk resistivity corresponding to the average dopant concentration used in our simulations to generate the profiles of discrete dopants.

Item Type:Conference Proceedings
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Brown, Mr Andrew and Asenov, Professor Asen and Martinez, Dr Antonio
Authors: Martinez, A., Brown, A., Seoane, N., and Asenov, A.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
ISBN:9781424428380

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