Impurity potential induced resonances in Doped Si nanowire: A NEGF approach

Martinez, A., Kalna, K. and Asenov, A. (2009) Impurity potential induced resonances in Doped Si nanowire: A NEGF approach. In: 9th IEEE Conference on Nanotechnology, 2009. IEEE-NANO 2009, Genoa, Italy, 26-30 Jul 2009, pp. 551-554. ISBN 9781424448326

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We study the coherent transport of electrons through a uniformly doped Silicon quantum wire in the presence of one impurity in the channel at room temperature using fully 3D Non-Equilibrium Green's Functions technique. The potential of the single impurity, assumed to be attractive (a donor), is self-consistently calculated via Poisson equation coupled with Schro�¿dinger equation in the effective mass approximation. The electron effective masses are re-normalised for the confinement. The effects of the screening on the donor and of the polarization at the Si/SiO2 interface are included in a non-perturbative way (in the Hartree's approximation). The transmission shows different types of resonances (Breit-Wigner and Fano types) from the quasi-bound states of the impurity when compared to the impurity free wire. We found that the type of resonance is a direct consequence of the shape of the self-consistent potential. The study has significant relevance to mesoscopic wires and nanowire transistors with cross sections of few nanometers where the electron wavelength and confinement play an important role.

Item Type:Conference Proceedings
Additional Information:Session WE4_3: Transport in Nanostructures I
Glasgow Author(s) Enlighten ID:Asenov, Professor Asen and Kalna, Dr Karol and Martinez, Dr Antonio
Authors: Martinez, A., Kalna, K., and Asenov, A.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering

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