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Martinez, A., Aldegunde, M., and Asenov, A. (2010) Channel length dependence of discrete dopant effects in narrow si nanowire transistors: A full 3D NEGF study. In: 14th International Workshop on Computational Electronics (IWCE), 27-29 Oct 2010, Pisa, Italy.
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| Item Type: | Conference Proceedings |
|---|---|
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s): | Asenov, Prof Asen and Martinez, Dr Antonio |
| Authors: | Martinez, A., Aldegunde, M., and Asenov, A. |
| College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
| Related URLs: |
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