New Process for Low Sheet and Ohmic Contact Resistance of AlN/GaN MOS-HEMTs

Taking, S., Khokhar, A., MacFarlane, D., Sharabi, S., Dabiran, A.M. and Wasige, E. (2010) New Process for Low Sheet and Ohmic Contact Resistance of AlN/GaN MOS-HEMTs. In: The 5th European Microwave Integrated Circuits Conference, Proceedings, France, 26th Sept – 1st Oct 2010,

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Item Type:Conference Proceedings
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Wasige, Professor Edward and Khokhar, Dr Ali
Authors: Taking, S., Khokhar, A., MacFarlane, D., Sharabi, S., Dabiran, A.M., and Wasige, E.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering

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