Thin Al2O3 formed by thermal oxidation of evaporated aluminium for AlN/GaN MOS-HEMT technology

Taking, S., Banerjee, A., Zhou, H., Li, X. , MacFarlane, D., Dabiran, A. and Wasige, E. (2010) Thin Al2O3 formed by thermal oxidation of evaporated aluminium for AlN/GaN MOS-HEMT technology. In: UKNC Conference, Cork, Ireland, 12-13 Jan 2010,

Full text not currently available from Enlighten.


Item Type:Conference Proceedings
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Wasige, Professor Edward and Li, Dr Xu and Zhou, Dr Haiping
Authors: Taking, S., Banerjee, A., Zhou, H., Li, X., MacFarlane, D., Dabiran, A., and Wasige, E.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering

University Staff: Request a correction | Enlighten Editors: Update this record