Linewidth metrology for sub-10 nm lithography

Thoms, S. and Macintyre, D.S. (2010) Linewidth metrology for sub-10 nm lithography. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 28(6), C6H6-C6H10. (doi: 10.1116/1.3505129)

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As optical lithography advances toward the 10 nm mark, much effort is being expended to push electron beam lithography into the deep sub-10-nm regime. A significant issue at this length scale is the ability to accurately measure and compare linewidths. Measurements using secondary electron micrographs have a bias of a few nanometers and are therefore difficult to interpret in the sub-10-nm regime. Transmission electron microscopy can give greater accuracy but requires significant effort. This article shows that the use of a backscattered electron image together with a metal coating where appropriate can yield better measurement results than by using secondary electrons. With the use of a suitable model, linewidths for sub-10-nm hydrogen silsesquioxane lines were extracted with an estimated error of 1 nm.

Item Type:Articles
Glasgow Author(s) Enlighten ID:Thoms, Dr Stephen and Macintyre, Dr Douglas
Authors: Thoms, S., and Macintyre, D.S.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
ISSN (Online):1520-8567

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