High Reliability Operation of 2 kW QCW 10-Bar Laser Diode Stacks at 808 nm

Loyo-Maldonado, V., Bacchin, G., Robertson, S., Man, K., Qiu, B., McDougall, S.D. and Marsh, J. (2009) High Reliability Operation of 2 kW QCW 10-Bar Laser Diode Stacks at 808 nm. In: High-Power Diode Laser Technology and Applications VII, San Jose, CA, 26 January 2009, (doi: 10.1117/12.809321)

Abstract

This paper presents the results obtained by Intense during the development of its 2 kW stack using Quantum Well Intermixing (QWI). A 200 W QCW bar operating at 808 nm has been designed with a 1 mm long cavity of which only a fraction is actively pumped. The bar has an 80% fill factor, and ten 200 W bars were stacked vertically in a G-type package with a 417 μm bar-to-bar pitch. The resulting compact emission area makes the stack compatible with most existing laser and electro-optic systems. A lifetime of 1x10⁹ shots has been obtained with no measurable degradation.

• Item Type: Conference Proceedings
• Additional Information: Proc SPIE vol. 7198, 2009
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Marsh, Professor John
• Authors: Loyo-Maldonado, V., Bacchin, G., Robertson, S., Man, K., Qiu, B., McDougall, S.D., and Marsh, J.
• College/School: College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering