Qui, B., Kowalski, O.P., McDougall, S.D., Schmidt, B. and Marsh, J. (2010) High Performance Visible Semiconductor Lasers Operating at 630 nm. In: Lasers and Electro-Optics, Conference on and Quantum Electronics and Laser Science Conference (CLEO/QELS), 2010, San Jose, CA, USA, 16-21 May,
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Abstract
630 nm single mode lasers with a V-profile layer incorporated within the waveguide core exhibit reduced fast axis divergence (19° FWHM) while maintaining a low threshold current (30 mA), making them ideal for display applications.
Item Type: | Conference Proceedings |
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Additional Information: | isbn: 9781557528902 |
Status: | Published |
Refereed: | Yes |
Glasgow Author(s) Enlighten ID: | Marsh, Professor John |
Authors: | Qui, B., Kowalski, O.P., McDougall, S.D., Schmidt, B., and Marsh, J. |
College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
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