Impact of Random Dopant Fluctuations on a Tri-Gate MOSFET

Garcia-Loureiro, A., Aldegunde, M., Seoane, N., Kalna, K. and Asenov, A. (2010) Impact of Random Dopant Fluctuations on a Tri-Gate MOSFET. In: 11th International Conference on Ultimate Integration on Silicon, 18-19 March 2010, p. 77.

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Item Type:Conference Proceedings
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Asenov, Professor Asen and Kalna, Dr Karol
Authors: Garcia-Loureiro, A., Aldegunde, M., Seoane, N., Kalna, K., and Asenov, A.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering

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