Effect of the channel thickness on the performance of the implant-free quantum-well MOSFET

Martinez, A., Benbakhti, B. and Asenov, A. (2010) Effect of the channel thickness on the performance of the implant-free quantum-well MOSFET. In: 14th International Workshop on Computational Electronics, Pisa, Italy, 27-29 Oct 2010,

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Item Type:Conference Proceedings
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Asenov, Professor Asen and Benbakhti, Dr Brahim and Martinez, Dr Antonio
Authors: Martinez, A., Benbakhti, B., and Asenov, A.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
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