Impact of Raised Source/Drain in the In53Ga47As Channel Implant-Free Quantum-Well Transistor

Benbakhti, B., Kalna, K., Wang, X., Cheng, B., Hellings, G., Eneman, G., De Meyer, K., Meuris, M. and Asenov, A. (2010) Impact of Raised Source/Drain in the In53Ga47As Channel Implant-Free Quantum-Well Transistor. In: 11th International Conference on Ultimate Integration Silicon (ULIS), Glasgow, UK, 2010, p. 129.

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Item Type:Conference Proceedings
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Wang, Dr Xingsheng and Asenov, Professor Asen and Benbakhti, Dr Brahim and Cheng, Dr Binjie and Kalna, Dr Karol
Authors: Benbakhti, B., Kalna, K., Wang, X., Cheng, B., Hellings, G., Eneman, G., De Meyer, K., Meuris, M., and Asenov, A.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering

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