A detailed 3D-NEGF simulation study of tunneling in a n-Si nanowire MOSFETs

Martinez, A.,, Seoane, N., Brown, A. and Asenov, A. (2010) A detailed 3D-NEGF simulation study of tunneling in a n-Si nanowire MOSFETs. In: 2010 Silicon Nanoelectronics Workshop, Honolulu, Hawaii, 13-14 June 2010,

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Item Type:Conference Proceedings
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Brown, Mr Andrew and Asenov, Professor Asen and Martinez, Dr Antonio
Authors: Martinez, A.,, Seoane, N., Brown, A., and Asenov, A.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
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