Monte Carlo simulation study of the impact of strain and substrate orientation on hole mobility in Germanium

Riddet, C., Watling, J., Chan, K. and Asenov, A. (2010) Monte Carlo simulation study of the impact of strain and substrate orientation on hole mobility in Germanium. Journal of Physics: Conference Series, 242(1), 012017. (doi: 10.1088/1742-6596/242/1/012017)

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Abstract

The use of alternative channel materials to maintain device performance with scaling for CMOS technology is an active area of research, with Germanium offering an extremely attractive possibility for pMOSFETs in CMOS. In this paper we use full band Monte Carlo transport simulations to investigate the impact of substrate orientation and biaxial strain on hole mobility in bulk Germanium helping to establish a preferential substrate channel orientation that can maximize carrier mobility for these devices.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Watling, Dr Jeremy and Asenov, Professor Asen and Riddet, Mr Craig
Authors: Riddet, C., Watling, J., Chan, K., and Asenov, A.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Journal of Physics: Conference Series
ISSN:1742-6596

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