Compact Model Extraction from Quantum Corrected Statistical Monte Carlo Simulation of Random Dopant Induced Drain Current Variability

Kovac, U., Alexander, C., Roy, G., Cheng, B. and Asenov, A. (2010) Compact Model Extraction from Quantum Corrected Statistical Monte Carlo Simulation of Random Dopant Induced Drain Current Variability. In: 8th International Conference on Advanced Semiconductor Devices and Microsystems, 25-27 Oct 2010, pp. 317-320. ISBN 9781424485758 (doi:10.1109/ASDAM.2010.5666361)

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Abstract

An efficient method to accurately capture quantum confinement effects within Monte Carlo (MC) simulation while simultaneously resolving ‘ab initio’ ionized impurity scattering via the density gradient (DG) formalism is presented. The model is applied to study the impact of transport variability due to scattering from random discrete dopants on the on-current variability in realistic nano CMOS transistors. Such simulations result in an increase in drain current variability when compared with similarly quantum corrected drift diffusion (DD) simulation. Following this, an efficient three-stage hierarchical strategy is presented that propagates the increased on-current variability captured in 3D quantum corrected ‘ab initio’ MC into efficient 3D DD simulations that are in turn used to obtain target ID-VG characteristics for the extraction of statistical compact models.

Item Type:Conference Proceedings
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Roy, Dr Gareth and Asenov, Professor Asen and Alexander, Dr Craig and Cheng, Dr Binjie and Kovac, Mr Urban
Authors: Kovac, U., Alexander, C., Roy, G., Cheng, B., and Asenov, A.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
ISBN:9781424485758

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