Direct tunnelling gate leakage variability in nano-CMOS transistors

Markov, S., Roy, S. and Asenov, A. (2010) Direct tunnelling gate leakage variability in nano-CMOS transistors. IEEE Transactions on Electron Devices, 57(11), pp. 3106-3114. (doi: 10.1109/TED.2010.2075932)

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Publisher's URL: http://dx.doi.org/10.1109/TED.2010.2075932

Abstract

A comprehensive simulation methodology for the systematic study of gate leakage variability in realistic nanoscale bulk CMOS transistors, on a statistical scale, is presented for the first time. This is based on the Glasgow “atomistic” 3-D drift-diffusion device simulator with density-gradient quantum corrections, which is capable of modeling various sources of stochastic variability, including random dopant fluctuations (RDFs) and oxide thickness fluctuations (OTFs). The capabilities of the simulator are extended to model direct tunnelling of electrons through the gate dielectric by means of an improved Wentzel-Kramer-Brillouin approximation with one model parameter only. The methodology is applied for the detailed study of the gate leakage variability arising from RDFs and OTFs in a 25-nm square-gate n-channel metal-oxide-semiconductor field-effect transistor with conventional architecture. The origins of gate leakage variability and gate current increase due to RDFs and OTFs individually, and in combination, are analyzed for bias conditions that are relevant to static power dissipation in digital CMOS circuits.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Markov, Dr Stanislav and Asenov, Professor Asen and Roy, Professor Scott
Authors: Markov, S., Roy, S., and Asenov, A.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:IEEE Transactions on Electron Devices
Publisher:Institute of Electrical and Electronics Engineers
ISSN:0018-9383
Published Online:21 October 2010

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Project CodeAward NoProject NamePrincipal InvestigatorFunder's NameFunder RefLead Dept
443791Atomic scale simulation of nanoelectronic devicesAsen AsenovEngineering & Physical Sciences Research Council (EPSRC)EP/E038344/1Electronic and Nanoscale Engineering