Chan, K.H., Benbakhti, B., Riddet, C., Watling, J. and Asenov, A. (2011) Simulation study of the 20nm gate-length implant-free quantum well p-MOSFET. Microelectronic Engineering, 88(4), pp. 362-365. (doi: 10.1016/j.mee.2010.09.025)
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Abstract
In this paper a drift diffusion simulation study of a 20 nm gate-length implant-free quantum well germanium p-MOSFET is presented, which covers the impact of mobility, velocity saturation and density of interface states on the transistor performance. The parasitic gate capacitance was also studied. The simulations show that the 20 nm gate-length implant-free quantum-well transistor design has good electrostatic integrity and performance potential.
| Item Type: | Articles |
|---|---|
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Watling, Dr Jeremy and Asenov, Professor Asen and Benbakhti, Dr Brahim and Riddet, Mr Craig |
| Authors: | Chan, K.H., Benbakhti, B., Riddet, C., Watling, J., and Asenov, A. |
| College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
| Journal Name: | Microelectronic Engineering |
| ISSN: | 0167-9317 |
| Published Online: | 10 October 2010 |
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