Capturing intrinsic parameter fluctuations using the PSP compact model

Cheng, B., Dideban, D., Moezi, N., Millar, C., Roy, G., Wang, X., Roy, S. and Asenov, A. (2010) Capturing intrinsic parameter fluctuations using the PSP compact model. In: Proceedings of the Conference on Design, Automation and Test in Europe (DATE 2010), Dresden, Germany, 8-12 March 2010, pp. 650-653.

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Publisher's URL: http://portal.acm.org/citation.cfm?id=1870926.1871080

Abstract

Statistical variability (SV) presents increasing challenges to CMOS scaling and integration at nanometer scales. It is essential that SV information is accurately captured by compact models in order to facilitate reliable variability aware design. Using statistical compact model parameter extraction for the new industry standard compact model PSP, we investigate the accuracy of standard statistical parameter generation strategies in statistical circuit simulations. Results indicate that the typical use of uncorrelated normal distribution of the statistical compact model parameters may introduce considerable errors in the statistical circuit simulations.

Item Type:Conference Proceedings
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Wang, Dr Xingsheng and Millar, Dr Campbell and Roy, Dr Gareth and Asenov, Professor Asen and Cheng, Dr Binjie and Roy, Professor Scott
Authors: Cheng, B., Dideban, D., Moezi, N., Millar, C., Roy, G., Wang, X., Roy, S., and Asenov, A.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering

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