Design, fabrication and physical analysis of TiN/AIN deep UV photodiodes

Barkad, H.A. et al. (2010) Design, fabrication and physical analysis of TiN/AIN deep UV photodiodes. Journal of Physics D: Applied Physics, 43(46), p. 465104. (doi: 10.1088/0022-3727/43/46/465104)

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Abstract

Deep-ultraviolet solar-blind photodiodes based on high-quality AlN films grown on sapphire substrates with a metal–semiconductor–metal configuration were simulated and fabricated. The Schottky contact is based on TiN metallization. The material is characterized by the micro-Raman spectroscopy and x-ray diffraction technique. The detector presents an extremely low dark current of 100 fA at −100 V dc bias for large device area as high as 3.1 mm2. It also exhibits a rejection ratio between 180 and 300 nm of three orders of magnitude with a very sharp cut-off wavelength at 203 nm (~6.1 eV). The simulation to optimize the photodiode topology is based on a 2D energy-balance model using the COMSOL® software. Simulation performed for different spacing for a given bias between electrodes show that a compromise must be found between the dark current and the responsivity for the optimization of the device performance. The measurement results are in good agreement with the model predictions.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Benbakhti, Dr Brahim
Authors: Barkad, H.A., Soltani, A., Mattalah, M., Gerbedoen, J.C., Rousseau, M., De Jaeger, J.C., Benbakhti, B., BenMoussa, A., Mortet, V., Moreau, M., Dupuis, R., and Ougazzaden, A.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Journal of Physics D: Applied Physics
ISSN:0022-3727
ISSN (Online):1361-6463

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