Development and operation of 50nm gate length hydrogen terminated diamond field effect transistors

Moran, D. , MacLaren, D. A. , Porro, S., Hill, R., McLelland, H., John, P. and Wilson, J.I.B. (2010) Development and operation of 50nm gate length hydrogen terminated diamond field effect transistors. In: UK Diamond Research Conference, Warwick, UK, July 2010,

Moran, D. , MacLaren, D. A. , Porro, S., Hill, R., McLelland, H., John, P. and Wilson, J.I.B. (2010) Development and operation of 50nm gate length hydrogen terminated diamond field effect transistors. In: UK Diamond Research Conference, Warwick, UK, July 2010,

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Item Type:Conference Proceedings
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Hill, Mr Richard and Moran, Dr David and MacLaren, Dr Donald
Authors: Moran, D., MacLaren, D. A., Porro, S., Hill, R., McLelland, H., John, P., and Wilson, J.I.B.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
College of Science and Engineering > School of Physics and Astronomy

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