Processing of 50nm gate-length hydrogen terminated diamond FETs for high frequency and high power applications

Moran, D. , MacLaren, D. A. , Porro, S., McLelland, H., John, P. and Wilson, J.I.B. (2010) Processing of 50nm gate-length hydrogen terminated diamond FETs for high frequency and high power applications. In: Micro and Nano Engineering Conference, Genoa, Italy, 19-22 Sep 2010,

Moran, D. , MacLaren, D. A. , Porro, S., McLelland, H., John, P. and Wilson, J.I.B. (2010) Processing of 50nm gate-length hydrogen terminated diamond FETs for high frequency and high power applications. In: Micro and Nano Engineering Conference, Genoa, Italy, 19-22 Sep 2010,

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Item Type:Conference Proceedings
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Moran, Dr David and MacLaren, Dr Donald
Authors: Moran, D., MacLaren, D. A., Porro, S., McLelland, H., John, P., and Wilson, J.I.B.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
College of Science and Engineering > School of Physics and Astronomy
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