Statistical NBTI-effect prediction for ULSI circuits

Tang, T.B., Murray, A.F., Cheng, B. and Asenov, A. (2010) Statistical NBTI-effect prediction for ULSI circuits. In: IEEE International Symposium on Circuits and Systems, Paris, France, 30 May - 2 Jun 2010, pp. 2494-2497. (doi: 10.1109/ISCAS.2010.5537132)

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Publisher's URL: http://dx.doi.org/10.1109/ISCAS.2010.5537132

Abstract

Static statistical variability and time-dependent reliability are traditionally analyzed separately. This paper presents a new methodology which combines both types of variability within a single circuit analysis framework. A comprehensive Negative Bias Temperature Instability (NBTI) model was implemented. Effects of random discrete dopants, line edge roughness and poly-Silicon granularity were considered. Using a 74X-series benchmark circuit (4-bit fast-carry adder) as an example, the concept of integrating both static statistical variability and time-dependent reliability into circuit analysis is demonstrated.

Item Type:Conference Proceedings
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Cheng, Dr Binjie and Asenov, Professor Asen
Authors: Tang, T.B., Murray, A.F., Cheng, B., and Asenov, A.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering

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