Brown, A.R., Huard, V. and Asenov, A. (2010) Statistical Simulation of Progressive NBTI Degradation in a 45-nm Technology pMOSFET. IEEE Transactions on Electron Devices, 57(9), pp. 2320-2323. (doi: 10.1109/TED.2010.2052694)
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Publisher's URL: http://dx.doi.org/10.1109/TED.2010.2052694
Abstract
We report results of the statistical 3-D simulation of progressive negative-bias temperature instability (NBTI) degradation in p-channel metal-oxide-semiconductor field-effect transistors corresponding to the 45-nm technology generation. The simulations take into account both the discrete NBTI-related fixed/trapped charges and the underlying sources of statistical variability in bulk metal-oxide-semiconductor field-effect transistors. Good agreement has been achieved between simulation results and statistical measurements carried out on similar devices and reported elsewhere. The analysis highlights the importance of the interactions between the discrete fixed/trapped charges and the random discrete dopants in the simulated transistors.
Item Type: | Articles |
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Status: | Published |
Refereed: | Yes |
Glasgow Author(s) Enlighten ID: | Brown, Mr Andrew and Asenov, Professor Asen |
Authors: | Brown, A.R., Huard, V., and Asenov, A. |
College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
Journal Name: | IEEE Transactions on Electron Devices |
Publisher: | Institute of Electrical and Electronics Engineers |
ISSN: | 0018-9383 |
Published Online: | 12 July 2010 |
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