Statistical Simulation of Progressive NBTI Degradation in a 45-nm Technology pMOSFET

Brown, A.R., Huard, V. and Asenov, A. (2010) Statistical Simulation of Progressive NBTI Degradation in a 45-nm Technology pMOSFET. IEEE Transactions on Electron Devices, 57(9), pp. 2320-2323. (doi: 10.1109/TED.2010.2052694)

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Publisher's URL: http://dx.doi.org/10.1109/TED.2010.2052694

Abstract

We report results of the statistical 3-D simulation of progressive negative-bias temperature instability (NBTI) degradation in p-channel metal-oxide-semiconductor field-effect transistors corresponding to the 45-nm technology generation. The simulations take into account both the discrete NBTI-related fixed/trapped charges and the underlying sources of statistical variability in bulk metal-oxide-semiconductor field-effect transistors. Good agreement has been achieved between simulation results and statistical measurements carried out on similar devices and reported elsewhere. The analysis highlights the importance of the interactions between the discrete fixed/trapped charges and the random discrete dopants in the simulated transistors.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Asenov, Professor Asen and Brown, Mr Andrew
Authors: Brown, A.R., Huard, V., and Asenov, A.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:IEEE Transactions on Electron Devices
Publisher:Institute of Electrical and Electronics Engineers
ISSN:0018-9383
Published Online:12 July 2010

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Project CodeAward NoProject NamePrincipal InvestigatorFunder's NameFunder RefLead Dept
501811ENIAC MOdeling and DEsign of Reliable, process variation-aware Nanoelectronic devices, circuits and systems (MODERN)Asen AsenovEngineering & Physical Sciences Research Council (EPSRC)EP/G04130X/1Electronic and Nanoscale Engineering