X-ray and neutron reflectivity studies of self-assembled InAs quantum dots stacks on GaAs (100)

Anagnostopoulos, D.F., Skuras, E., Stanley, C., Borchert, G.L. and Valicu, R. (2009) X-ray and neutron reflectivity studies of self-assembled InAs quantum dots stacks on GaAs (100). Journal of Alloys and Compounds, 483(1-2), pp. 414-417. (doi:10.1016/j.jallcom.2008.08.113)

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Abstract

X-ray and neutron reflectometry are used for structural characterization of self-assembled InAs quantum dot stacks on GaAs (1 0 0), grown by molecular beam epitaxy. The macroscopic density profile of uncapped InAs layer is extracted and shows a three-dimensional pyramidal structure of maximum height of 5 nm. The ultra thin InAs buried layers are well approximated as a two-dimensional structure, indicating amalgamation between InAs and GaAs. The interface roughness of the capping layers is found smaller than 0.5 nm, showing the high quality of the epitaxial surfaces. The thicknesses of the capping GaAs layers are extracted in atomic scale level and are found in fine agreement with the nominal values.

Item Type:Articles
Keywords:Atomic scale structure, density, GaAs, layer, layers, neutron reflectivity, nm, quantum dots, reflectivity, roughness, solar-cells, surface, surfaces, thickness, x-ray, x-ray reflectivity
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Stanley, Professor Colin
Authors: Anagnostopoulos, D.F., Skuras, E., Stanley, C., Borchert, G.L., and Valicu, R.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Journal of Alloys and Compounds
ISSN:0925-8388

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