Ayubi-Moak, J.S., Akis, R., Saraniti, M., Ferry, D.K. and Goodnick, S.M. (2009) Physical modeling of microwave transistors using a full-band/full-wave simulation approach. In: Computational Electronics, 2009. IWCE '09. 13th International Workshop on. IEEE, pp. 261-264. ISBN 9781424439256 (doi: 10.1109/IWCE.2009.5091139)
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Abstract
In this work, a full-band Cellular Monte Carlo (CMC) device simulator is self-consistently coupled to an alternate-direction implicit (ADI) finite-difference time-domain (FDTD) full-wave solver. This simulation tool is then used to study the high-frequency response of a dual-finger gate GaAs MESFET via direct S-parameter extraction from time-domain simulation results
| Item Type: | Book Sections |
|---|---|
| Keywords: | ADI-FDTD solver, cellular Monte Carlo simulator, device, full-band/full-wave, GaAs, global modelling, HEMTS, simulation, transistor, transistors. |
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Ayubi-Moak, Mr Jason |
| Authors: | Ayubi-Moak, J.S., Akis, R., Saraniti, M., Ferry, D.K., and Goodnick, S.M. |
| College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
| Publisher: | IEEE |
| ISBN: | 9781424439256 |
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