Physical modeling of microwave transistors using a full-band/full-wave simulation approach

Ayubi-Moak, J.S., Akis, R., Saraniti, M., Ferry, D.K. and Goodnick, S.M. (2009) Physical modeling of microwave transistors using a full-band/full-wave simulation approach. In: Computational Electronics, 2009. IWCE '09. 13th International Workshop on. IEEE, pp. 261-264. ISBN 9781424439256 (doi:10.1109/IWCE.2009.5091139)

Full text not currently available from Enlighten.

Abstract

In this work, a full-band Cellular Monte Carlo (CMC) device simulator is self-consistently coupled to an alternate-direction implicit (ADI) finite-difference time-domain (FDTD) full-wave solver. This simulation tool is then used to study the high-frequency response of a dual-finger gate GaAs MESFET via direct S-parameter extraction from time-domain simulation results

Item Type:Book Sections
Keywords:ADI-FDTD solver, cellular Monte Carlo simulator, device, full-band/full-wave, GaAs, global modelling, HEMTS, simulation, transistor, transistors.
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Ayubi-Moak, Mr Jason
Authors: Ayubi-Moak, J.S., Akis, R., Saraniti, M., Ferry, D.K., and Goodnick, S.M.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Publisher:IEEE
ISBN:9781424439256

University Staff: Request a correction | Enlighten Editors: Update this record