High-performance in0.75Ga0.25As implant-free n-type MOSFETs for low power applications

Ayubi-Moak, J.S., Kalna, K. and Asenov, A. (2009) High-performance in0.75Ga0.25As implant-free n-type MOSFETs for low power applications. In: Electron Devices, 2009. CDE 2009. Spanish Conference on. IEEE, pp. 92-95. ISBN 9781424428380 (doi:10.1109/SCED.2009.4800438)

Full text not currently available from Enlighten.

Publisher's URL: http://ieeexplore.ieee.org/xpl/conhome.jsp?punumber=1001176


The performance of implant-free (IF), n-type III-V MOSFETs with an In0.75Ga0.25As channel have been evaluated using a 2D finite-element Monte Carlo device simulator. We investigate the device performance of a set of scaled transistors with gate lengths of 30, 20 and 15 nm at a drain bias of 0.5 V to determine whether this novel architecture can deliver high drain current at low bias conditions required for high-performance CMOS applications

Item Type:Book Sections
Additional Information:February 11-13, 2009, Museo do Pobo Galego, Santiago de Compostela, Spain
Keywords:Channel, CMOS, device, devices, GaAs, Iii-V mosfets Monte-Carlo simulations, MOSFET, MOSFETs, nm, performance, transistor, transistors
Glasgow Author(s) Enlighten ID:Ayubi-Moak, Mr Jason and Asenov, Professor Asen and Kalna, Dr Karol
Authors: Ayubi-Moak, J.S., Kalna, K., and Asenov, A.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering

University Staff: Request a correction | Enlighten Editors: Update this record