Effects of Self-Heating on Performance Degradation in AlGaN/GaN-Based Devices

Benbakhti, B., Soltani, A., Kalna, K., Rousseau, M. and De Jaeger, J.C. (2009) Effects of Self-Heating on Performance Degradation in AlGaN/GaN-Based Devices. IEEE Transactions on Electron Devices, 56(10), pp. 2178-2185. (doi:10.1109/TED.2009.2028400)

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Abstract

A self-consistent electrothermal transport model that couples electrical and thermal transport equations is established and applied to AlGaN/GaN device structures grown on the following three different substrate materials: 1) SiC; 2) Si; and 3) sapphire. Both the resultant I-V characteristics and surface temperatures are compared to experimental I-V measurements and Raman spectroscopy temperature measurements. The very consistent agreement between measurements and simulations confirms the validity of the model and its numerical rendition. The results explain why the current saturation in measured I-V characteristics occurs at a much lower electric field than that for the saturation of electron drift velocity. The marked difference in saturated current levels for AlGaN/GaN structures on SiC, Si, and sapphire substrates is directly related to the different self-heating levels that resulted from the different biasing conditions and the distinctive substrate materials

Item Type:Articles
Keywords:AlGaN/GaN, Boost converter, Device, Devices, Electron-transport, Electrothermal modeling, Equations, Field, Field-effect transistors, Gan, Hemts, Model, Performance, Phase materials system, Power, Raman spectroscopy, Self-heating, Si, Simulation, Spectroscopy, Substrate, Surface, Temperature, Transport, Wurtzite
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Benbakhti, Dr Brahim and Kalna, Dr Karol
Authors: Benbakhti, B., Soltani, A., Kalna, K., Rousseau, M., and De Jaeger, J.C.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:IEEE Transactions on Electron Devices
Publisher:Institute of Electrical and Electronics Engineers
ISSN:0018-9383

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