Comparison of Density Gradient and NEGF for 3D Simulation of a Nanowire MOSFET

Brown, A.R., Martinez, A., Seoane, N. and Asenov, A. (2009) Comparison of Density Gradient and NEGF for 3D Simulation of a Nanowire MOSFET. Proceedings of the 2009 Spanish Conference on Electron Devices, pp. 140-143.

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Abstract

The density gradient quantum correction to the conventional drift-diffusion simulation technique has become a well established method to include quantum mechanical effects without resorting to a full quantum transport solution. The results obtained from this method, however, can depend greatly on the values of certain parameters used, and it is usual to calibrate the simulation against more rigorous quantum transport simulations such as non-equilibrium Green's functions (NEGF). Here we present an analysis of the effect of varying fitting parameters within density gradient and compare the results to NEGF simulations for a nanowire transistor

Item Type:Articles
Keywords:Density drift-diffusion Green's functions MOSFET NEGF parameters Quantum transport QUANTUM-TRANSPORT simulation transistor TRANSPORT
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Asenov, Professor Asen and Brown, Mr Andrew and Martinez, Dr Antonio
Authors: Brown, A.R., Martinez, A., Seoane, N., and Asenov, A.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Proceedings of the 2009 Spanish Conference on Electron Devices

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