Low-Dimensional Waveguide Grating Fabrication in GaN with Use of SiCl4/Cl-2/Ar-Based Inductively Coupled Plasma Dry Etching

Dylewicz, R., Patela, S., Hogg, R.A., Fry, P.W., Parbrook, P.J., Airey, R. and Tahraoui, A. (2009) Low-Dimensional Waveguide Grating Fabrication in GaN with Use of SiCl4/Cl-2/Ar-Based Inductively Coupled Plasma Dry Etching. Journal of Electronic Materials, 38(5), pp. 635-639. (doi: 10.1007/s11664-009-0731-5)

Abstract

Optimized fabrication of submicron-sized features in gallium nitride (GaN) with the use of inductively coupled plasma (ICP) dry etching, based on SiCl4/Cl-2/Ar gas mixture, is presented. Dense periodic patterns, i.e., 400-nm-period gratings, were transferred into a gallium nitride waveguide under different etching conditions. ICP power, radiofrequency (RF) power, chamber pressure, and Ar/Cl-2 gas mixing ratio were altered during the experiment. Depths of fabricated grating couplers up to 670 nm were achieved. The most suitable etching conditions are discussed with the assessment based on etching selectivity, scanning electron microscopy (SEM) observation of grating tooth slope, hard-mask erosion process, and etched surface morphology

• Item Type: Articles
• Keywords: Couplers, Dry Etching, Electron-Microscopy, Etching, Fabrication, Features, Gallium Nitride, GaN, Gas, Grating Coupler, Gratings, ICP, Inductively Coupled Plasma, Microscopy, Nm, Periodic Structure, Plasma, Power, Ratio, Surface
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Dylewicz, Dr Rafal
• Authors: Dylewicz, R., Patela, S., Hogg, R.A., Fry, P.W., Parbrook, P.J., Airey, R., and Tahraoui, A.
• College/School: College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
• Journal Name: Journal of Electronic Materials
• ISSN: 0361-5235